A circuit diagram of a device
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Components

Diode

  • Reverse biased diode forms a depletion region as charges migrate
    • Electron moves faster - induces curent
    • Great for gamma ray detection
  • Charged particles (gammas from Bremsstrahlung radiation) deposit energy onto depletion region of photodiode.
  • Thermal excitation of photodiode material induces a dark current
    • Source of our baseline
    • When this baseline is too large, lose range in our channel

Op-Amp

  • Standard non-inverting config
  • 0-3.3V range
  • Gain will amplify our baseline and any noise!
    • Gain provided by ratio of lower resistor network

Capacitor

  • Q = C * V
    • Q is the charge from induced current from photodiode - constant
    • V is the pulse we see that gets read by ADC (after amplification)
    • Voltage pulse is inversely proportional to capacitance
  • Basically, capacitance inversely proportional to sensitivity
    • smaller capacitance = more sensitive
      • low C high V bigger pulse to be read more sensitive
    • larger capacitance = less sensitive
      • high C low V smaller pulse to be read less sensitive

Resistor

  • V = I * R
    • I is the current from diode
    • V is the pulse we see that gets read by ADC
    • Resistance proportional to baseline voltage
  • If R too high, baseline is too high, and our usable range is smaller
    • Less sensitive sensor!

Time Constant

  • R * C
  • Higher time constant
    • Slower decay
      • Can sample slower!
        • lower data volume
    • Only possible by:
      • Increasing baseline (bad)
      • Decreasing sensitivity
        • Not suitable for more sensitive channels
  • Lower time constant
    • Faster decay
      • Must sample faster!
        • higher data volume
    • Only possible by:
      • Lowering baseline (good)
      • Increasing sensitivity
        • Not suitable for less sensitive channels